GE发那科产品IC693BEM320
IC693BEM320并联的器件工作温度尽量一致，在散热器上尽量靠近。
逆变桥计算随着功率半导体的发展，IGBT已经成为当下中大功率变频器逆变电路开关管选取的佳选择。 再选择IGBT时我们要注意以下几点：
①首先根据变频器载频工作范围及热设计的要求选择一种合适的类型。 选择三种类型IGBT中的一种：
极低的通态压降，但开关损耗大;
高通态压降，但开关损耗小;
中等通态压降，但开关损耗较小;
鱼和熊掌不可兼得，根据自己的需求择优选取。
②根据体积、结构是否易于并联、维护成本及结构设计的压力等要求决定采用那一种封装形式。
③计算所选IGBT的电流等级、电压等级，该步骤同时也影响了吸收电路的形式选择及结构设计的特点。
关于逆变元件耐压和电流的选择：
考虑到瞬间过电压，IGBT的耐压通常为直流母线电压的两倍。 瞬间过电压受回路杂散电感和IGBT开关速度的影响，所以实际耐压的选择要视回路的杂散电感而定。
IC693BEM320
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